2013年8月 至 2015年5月,香港城市大学物理与材料科学系以及电子工程系,历任博士后、研究员、资深研究员

2009年6月 至 2009年8月,香港城市大学物理与材料科学系,助理研究员


研究兴趣包括信息存储与传感器件,在Science、Chem. Rev.、Nat. Electron.、Nat. Commun.、Matter、Adv. Mater.、Appl. Phys. Rev.、Adv. Funct. Mater.、Nano Lett.、Mater. Today、Nano Today、IEEE EDL、IEEE TED等期刊发表论文100余篇,被引用8000余次,H-因子49,获授权中国与美国发明专利20余项。



Materials Horizons顾问委员会委员(2023至今)

IEEE Access编辑委员会委员(2020至今)


Multifunctional Materials编辑委员会委员(2019-2022)

PLOS ONE编辑委员会委员(2019至今)

Energy Reviews编辑委员会委员(2022至今)

General Chemistry编辑委员会委员(2022至今)

The Innovation青年编辑(2022至今)


Materials Futures青年编委(2023至今)

Science China Materials青年编委(2023至今)


1.Y. Zhou(Editor), Semiconducting Metal Oxide Thin-Film Transistors: Fundamentals and Applications (IOP Publishing, 2020). ISBN: 9780750325547

2.Y. Zhou(Editor), Optoelectronic Organic-Inorganic Semiconductor Heterojunctions (CRC Press, 2021). ISBN:9780367342128

3. S.-T. Han andY. Zhou(Editor), Photo-Electroactive Nonvolatile Memories For Data Storage and Neuromorphic Computing (Woodhead Publishing, 2020). ISBN: 9780128197172

4.Y. Zhouand H.-H. Chou (Editor), Functional Tactile Sensors: Materials, Devices and Integrations (Woodhead Publishing, 2021). ISBN: 9780128206331

5.Y. Zhouand S.-T. Han (Editor), Ambipolar Materials and Devices (RSC Publishing, 2020). ISBN: 9781788018685

6.Y. Zhouand Y. Wang (Editor), Perovskite Quantum Dot: Synthesis, Properties and Applications (Springer Singapore, 2020). ISBN: 9789811566363

7.Y. Zhouand G. Ding (Editor), Polymer Nanocomposite Materials-Applications in Integrated Electronic Devices (Wiley-VCH, 2021).

代表性论文 (2018-2022)

39. P. Zhao, Y. Song, P. Xie, F. Zhang, T. Xie, G. Liu, J. Zhao, S.-T. Han andY. Zhou,* All-Organic Smart Textile Sensor for Deep-Learning-Assisted Multimodal Sensing, Adv. Funct. Mater. 2023, 33, 2301816.

38. K. Zhou, G. Shang, H.-H. Hsu, S.-T. Han, V. A. L. Roy andY. Zhou,* Emerging Two-Dimensional Metal Oxides: From Synthesis to Device Integration, Adv. Mater. 2023, 35, 2207774.

37. S. Batool, M. Idrees, S.-T. Han andY. Zhou,* 2D Layers of Group VA Semiconductors: Fundamental Properties and Potential Applications, Adv. Sci. 2023, 10, 2203956.

36. S. Batool, M. Idrees, S.-T. Han, V. A. L. Roy andY. Zhou,* Electrical Contacts with 2D Materials: Current Developments and Future Prospects, Small 2023, 19, 2206550.

35. X. Chen, B. Chen, B. Jiang, T. Gao, G. Shang, S.-T. Han, C.-C. Kuo, V. A. L. Roy andY. Zhou,* Nanowires for UV–vis–IR Optoelectronic Synaptic Devices, Adv. Funct. Mater. 2023, 33, 2208807.

34. R.-S. Chen, G. Ding, Z. Feng, S.-R. Zhang, W.-A. Mo, S.-T. Han andY. Zhou,* MoS2 Transistor with Weak Fermi Level Pinning via MXene Contacts,Adv. Funct. Mater.2022, 32, 2204288.

33. Y. Zhai, P. Xie, Z. Feng, C. Du, S.-T. Han andY. Zhou,*2D Heterostructure for High-Order Spatiotemporal Information Processing,Adv. Funct. Mater.2022, 32, 2108440.

32. G. Ding, R.-S. Chen, P. Xie, B. Yang, G. Shang, Y. Liu, L. Gao, W.-A. Mo, K. Zhou, S.-T. Han andY. Zhou,*Filament Engineering of Two-Dimensional h-BN for a Self-Power Mechano-Nociceptor System,Small2022, 18, 2200185.

31. X. Liu, F. Wang,* J. Su,Y. Zhou*and S. Ramakrishna,* Bio-Inspired Three-Dimensional Artificial Neuromorphic Circuits,Adv. Funct. Mater.2022, 32, 2113050.

30. G. Ding, B. Yang, R.-S. Chen, W.-A. Mo, K. Zhou, Y. Liu, G. Shang, Y. Zhai, S.-T. Han andY. Zhou,* Reconfigurable 2D WSe2-Based Memtransistor for Mimicking Homosynaptic and Heterosynaptic Plasticity,Small2021, 17, 2103175.

29.Y. Zhou,* Material foundation for future 5G technology,Acc. Mater. Res. 2021, 2, 306-310.

28.Y. Zhou,* Finding Means to Encourage Greatness: Words to Promote Group Cohesion,Matter2021, 4, 1752-1754.

27.G. Ding, B. Yang, R.-S. Chen, K. Zhou, S.-T. Han andY. Zhou,* MXenes for memristive and tactile sensory systems,Appl. Phys. Rev.2021, 8, 011316.

26. X.-T. Liu, J.-R. Chen, Y. Wang, S.-T. Han* andY. Zhou,* Building Functional Memories and Logic Circuits with Two-Dimensional Boron Nitride,Adv. Funct. Mater.2021, 31, 2004733.

25.Y. Zhouand S.-T. Han,* Room-temperature magnetoelastic coupling,Science2020, 367, 627.

24. L. Guo, S.-T. Han* andY. Zhou,* Electromechanical Coupling Effects for Data Storage and Synaptic Devices,Nano Energy2020, 77, 105156.

23.Y. Zhou,* Making allowances for COVID-19,Science2020, 368, 98.

22. J.-Q. Yang, R. Wang, Y. Ren, J.-Y. Mao, Z.-P. Wang,Y. Zhou* and S.-T. Han,* Neuromorphic Engineering: From Biological to Spike-based Hardware Nervous Systems,Adv. Mater.2020, 32, 2003610.

21. Z. Lv, Y. Wang, J. Chen, J. Wang,Y. Zhou* and S.-T. Han,* Semiconductor Quantum Dots for Memories and Neuromorphic Computing Systems,Chem. Rev. 2020, 120, 3941.

20.Y. Zhou,* The Samsung story,Nat. Electron.2020, 3, 234.

19. Z.-P. Wang, Y. Wang, J. Yu, J.-Q. Yang,Y. Zhou,* J.-Y. Mao, R. Wang, X. Zhao, W. Zheng and S.-T. Han,* Type-I Core–Shell ZnSe/ZnS Quantum Dot-Based Resistive Switching for Implementing Algorithm,Nano Lett.2020, 20, 5562.

18. K. Zhou, C. Zhang, Z. Xiong, H.-Y. Chen, T. Li, G. Ding, B. Yang, Q. Liao,Y. Zhou* and S.-T. Han,* Template-Directed Growth of Hierarchical MOF Hybrid Arrays for Tactile Sensor,Adv. Funct. Mater.2020, 30, 2001296.

17. J. Wang, Z. Lv, X. Xing, X. Li, Y. Wang, M. Chen, G. Pang, F. Qian,Y. Zhou* and S.-T. Han,* Optically Modulated Threshold Switching in Core-Shell Quantum Dot Based Memristive Device,Adv. Funct. Mater.2020, 30, 1909114.

16. J.-Q. Yang, R. Wang, Z.-P. Wang, Q.-Y. Ma, J.-Y. Mao, Y. Ren, X. Yang,Y. Zhou* and S.-T. Han,* Leaky Integrate-and-Fire Neurons based on Perovskite Memristor for Spiking Neural Networks,Nano Energy2020, 74, 104828.

15. Y. Ren, X. Yang, L. Zhou, J.-Y. Mao, S.-T. Han* andY. Zhou,* Recent Advances in Ambipolar Transistors for Functional Applications,Adv. Funct. Mater.2019, 29, 1902105.

14. C. Zhang, W. B. Ye, K. Zhou, H.-Y. Chen, J.-Q. Yang, G. Ding, X. Chen,Y. Zhou,* L. Zhou, F. Li and S.-T. Han,* Bio-inspired Artificial Sensory Nerve based on Nafion Memristor,Adv. Funct. Mater.2019, 29, 1808783.

13. G. Ding, Y. Wang, G. Zhang, K. Zhou, K. Zeng, Z. Li,Y. Zhou,* C. Zhang, X. Chen and S.-T. Han,* 2D Metal-Organic Framework Nanosheets with Time-Dependent and Multi-Level Memristive Switching,Adv. Funct. Mater.2019, 29, 1806637.

12. Z. Lv, M. Chen, F. Qian, V. A. L. Roy,* W. Ye, D. She, Y. Wang, Z.-X. Xu,Y. Zhou* and S.-T. Han,* Mimicking Neuroplasticity in a Hybrid Biopolymer Transistor by Dual Modes Modulation,Adv. Funct. Mater.2019, 29, 1902374.

11.X. Chen, K. Zeng, X. Zhu, G. Ding, T. Zou, C. Zhang, K. Zhou,Y. Zhou* and S.-T. Han,* Light Driven Active Transition of Switching Modes in Homogeneous Oxides/Graphene Heterostructure,Adv. Sci.2019, 6, 1900213.

10.L. Zhou, S. Yang, G. Ding,* J.-Q. Yang, Y. Ren, S.-R. Zhang, J.-Y. Mao, Y. Yang,Y. Zhou* and S.-T. Han,* Tunable Synaptic Behavior Realized in C3N Composite based Memristor,Nano Energy2019, 58, 293.

9.H. Li, X. Jiang, W. Ye, H. Zhang, L. Zhou, F. Zhang, D. She,Y. Zhou* and S.-T. Han,* Fully Photon Modulated Heterostructure for Neuromorphic Computing,Nano Energy2019, 65, 104000.

8. Z. Lv,Y. Zhou,* S.-T. Han* and V. A. L. Roy,* From biomaterials-based data storage to bio-inspired artificial synapse,Mater. Today2018, 21, 537.

7. Y. Zhai, X. Yang, F. Wang,* Z. Li, G. Ding, Z. Qiu, Y. Wang,Y. Zhou* and S.-T. Han,* Infrared‐Sensitive Memory Based on Direct‐Grown MoS2–Upconversion‐Nanoparticle Heterostructure,Adv. Mater.2018, 30, 1803563.

6. Y. Wang, Z. Lv, Q. Liao, H. Shan, J. Chen,Y. Zhou,* L. Zhou, X. Chen, V. A. L. Roy,* Z. Wang, Z. Xu, Y.-J. Zeng and S.-T. Han,* Synergies of Electrochemical Metallization and Valance Change in All‐Inorganic Perovskite Quantum Dots for Resistive Switching,Adv. Mater.2018, 30, 1800327.

5. Y. Wang, Z. Lv, J. Chen, Z. Wang,Y. Zhou,* L. Zhou, X. Chen and S.-T. Han*, Photonic Synapses Based on Inorganic Perovskite Quantum Dots for Neuromorphic Computing,Adv. Mater.2018, 30, 1802883.

4. X. Chen,Y. Zhou,* V. A. L. Roy* and S.-T. Han,* Evolutionary Metal Oxide Clusters for Novel Applications: Toward High-Density Data Storage in Nonvolatile Memories,Adv. Mater.2018, 30, 1703950.

3. Y. Ren, J.-Q. Yang, L. Zhou, J.-Y. Mao, S.-R. Zhang,Y. Zhou* and S.-T. Han*, Gate‐Tunable Synaptic Plasticity through Controlled Polarity of Charge Trapping in Fullerene Composites,Adv. Funct. Mater.2018, 28, 1805599.

2. Y. Zhai, J.-Q. Yang,Y. Zhou,* J.-Y. Mao, Y. Ren, V. A. L. Roy* and S. -T. Han*, Toward non-volatile photonic memories: Concept, material and design,Mater. Horiz.2018, 5, 641.

1. Z. Lv, Y. Wang, Z. Chen, L. Sun, J. Wang, M. Chen, Z. Xu, Q. Liao, L. Zhou, X. Chen, J. Li, K. Zhou,Y. Zhou,* Y.-J. Zeng, S.-T. Han* and V. A. L. Roy,* Photo-Tunable Biomemory based on Light-Mediated Charge Trap,Adv. Sci.2018, 5, 1800714.

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